Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts

@article{Meng2019FabricationAC,
  title={Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts},
  author={X.-H. Meng and G.-J. Wang and Mitchell Wagner and Hao Mei and W.-Z. Wei and J. Liu and G. Yang and Dongming Mei},
  journal={Journal of Instrumentation},
  year={2019},
  volume={14},
  pages={P02019 - P02019}
}
Large, high-purity, germanium (HPGe) detectors are needed for neutrinoless double-beta decay and dark matter experiments. Currently, large (> 4 inches in diameter) HPGe crystals can be grown at the University of South Dakota (USD). We verify that the quality of the grown crystals is sufficient for use in large detectors by fabricating and characterizing smaller HPGe detectors made from those crystals. We report the results from eight detectors fabricated over six months using crystals grown at… 
Characterization of high-purity germanium (Ge) crystals for developing novel Ge detectors
High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect
Investigation of amorphous germanium contact properties with planar detectors made from USD-grown germanium crystals
The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals
Characterization of high-purity germanium detectors with amorphous germanium contacts in cryogenic liquids
For the first time, planar high-purity germanium detectors with thin amorphous germanium contacts were successfully operated directly in liquid nitrogen and liquid argon in a cryostat at the
Impact of charge trapping on the energy resolution of Ge detectors for rare-event physics searches
Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay.
The impact of the charge barrier height on Germanium (Ge) detectors with amorphous-Ge contacts for light dark matter searches
Germanium (Ge) detectors with ability of measuring a single electron–hole (e–h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge
Development of planar P-type point contact germanium detectors for low-mass dark matter searches
The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of $$\sim $$ ∼ 0.7 eV requires internal amplification of the charge signal. This
Fabrication of p contact by thermally induced solid state regrowth of Al on p-type Ge crystal
Investigation of the dislocation structure in Czochralski germanium crystals grown in [211] and [110] growth directions
The dislocation structure of single-crystalline germanium crystals grown by the Czochralski method in [2 1 1] and [1 1 0] directions has been examined by white beam X-ray topography. The dislocation
Temperature-dependent charge barrier height of amorphous germanium contact detector
  • R. PanthWenzhao Wei Guojian Wang
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • 2022
...
...

References

SHOWING 1-10 OF 77 REFERENCES
Investigation of amorphous germanium contact properties with planar detectors made from USD-grown germanium crystals
The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals
Crystal growth and detector performance of large size High-purity Ge crystals
Development of large size high-purity germanium crystal growth
Study on the Properties of High Purity Germanium Crystals
In the crystal growth lab of South Dakota University, we are growing high purity germanium (HPGe) crystals and using the grown crystals to make radiation detectors. As the detector grade HPGe
Position-sensitive germanium detectors for gamma-ray imaging and spectroscopy
Gamma-ray imaging with position-sensitive germanium detectors offers the advantages of excellent energy resolution, high detection efficiency, and potentially good spatial resolution. The development
Optimization of process parameters for amorphous semiconductor contacts on high-purity germanium detectors
High-purity germanium (HPGe) represents a premium material for gamma-ray spectroscopy and imaging, with electrical contacts playing a large role in detector performance. Amorphous semiconductor
Radial and axial impurity distribution in high-purity germanium crystals
Recent developments in semiconductor gamma-ray detectors
SummaryThe successful development of lithium-drifted Ge detectors in the 1960s marked the beginning of the significant use of semiconductor crystals for direct detection and spectroscopy of
...
...