Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap

@article{Hsu2011FabricationAC,
  title={Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap},
  author={Chia-Wei Hsu and Chia-Hao Kuo and Hsing-Hui Hsu and Horng-Chih Lin and Tiao-Yuan Huang},
  journal={2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems},
  year={2011},
  pages={313-316}
}
In this work, a novel suspended-NW-channel TFT was fabricated and characterized successfully. With the simple and low-cost over-etching-time-controlled RIE technique and a BOE wet etch process, the suspended NWs of 52 nm and an air gap of 100 nm is achieved. It is also found that the fabricated device with longer channel length and S/D extension length reduces the pull-in voltage and the hysteresis window.