Fabrication and characterisation of nanospintronic devices
@inproceedings{Samm2013FabricationAC, title={Fabrication and characterisation of nanospintronic devices}, author={J. Samm and Jorg Gramich and Andreas Baumgartner and Markus Weiss and Christian Schoenenberger}, year={2013} }
We report an improved fabrication scheme for carbon based nanospintronic devices and demonstrate the necessity for a careful data analysis to investigate the fundamental physical mechanisms leading to magnetoresistance. The processing with a low-density polymer and an optimised recipe allows us to improve the electrical, magnetic and structural quality of ferromagnetic Permalloy contacts on lateral carbon nanotube (CNT) quantum dot spin valve devices, with comparable results for thermal and…
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Spintronic devices: a promising alternative to CMOS devices
- PhysicsJournal of Computational Electronics
- 2021
A brief history, current status, and future prospectus of the spintronics field for a novice is introduced and a detailed description of various switching mechanisms to write the information in spintronic devices that have the capability to be used for processing-in-memory architecture in the immediate future is described.
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Carbon nanotube spin-valve with optimized ferromagnetic contacts
- Chemistry
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In contrast to conventional electronic devices based on charge transport, spin electronic or spintronic devices also use the electron spin degree of freedom to control electron transport [Zutic et…
ZEP520A, composed of 11% methyl styrene and chloromethyl acrylate copolymer and 89% anisole (solvent) by ZEON corporation
Here we use the so-called tunneling polarization that also comprises the tunneling matrix elements and not only the density of states