Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction

In this paper, the process of fabrication of GaSb-based electrically injected resonant-cavity LEDs near 2.3 mum is detailed. The electrical and optical properties of these diodes operating in continuous wave at room temperature are also presented. The different tested monolithic structures have similar designs with two doped AlAsSb/GaSb Bragg mirrors and an… (More)