Fabrication, optimization and application of complementary Multiple-Gate Tunneling FETs

@article{Fulde2008FabricationOA,
  title={Fabrication, optimization and application of complementary Multiple-Gate Tunneling FETs},
  author={M. Fulde and A. Heigl and M. Weis and M. Wirnshofer and K. Arnim and T. Nirschl and M. Sterkel and G. Knoblinger and W. Hansch and G. Wachutka and D. Schmitt-Landsiedel},
  journal={2008 2nd IEEE International Nanoelectronics Conference},
  year={2008},
  pages={579-584}
}
  • M. Fulde, A. Heigl, +8 authors D. Schmitt-Landsiedel
  • Published 2008
  • Materials Science
  • 2008 2nd IEEE International Nanoelectronics Conference
  • We present fabrication, optimization and application aspects of complementary Multiple-Gate Tunneling FETs (MuGTFETs). Tunneling FETs are implemented in a MuGFET technology for the first time. N- and p-type tunneling currents are observed within a single device structure. Digital and analog device performance is analyzed. Measured devices show low on currents in the tens of nA regime due to not optimized doping profiles. However, promising analog characteristics are obtained with intrinsic gain… CONTINUE READING
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