FTIR investigations on X-N bonds of annealed PolySi/NIDOS films

Abstract

The paper presents Fourier transform infrared spectroscopy investigations on composition bonds of polysilicon/Nitrogen Doped Silicon PolySi/NIDOS film deposited by Low Pressure Chemical Vapor Deposition or (LPCVD). These films are annealed at 700°C for different duration from 15 min to 480 min. The FTIR results indicate the presence Si-N, BN and B-N-B bonds… (More)

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