Extrinsic performance of flexible graphene FET with graphene oxide gate dielectric

Abstract

A study is performed on extrinsic performance of graphene field effect transistor on a flexible polyimide substrate with graphene oxide gate dielectric. Using self-consistent calculation, it is shown that quantum capacitance retains a nonzero minimum at the dirac point. Excellent electron and hole mobilities and maximum on current of 137 μA are… (More)

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@article{Jewel2013ExtrinsicPO, title={Extrinsic performance of flexible graphene FET with graphene oxide gate dielectric}, author={Mohi Uddin Jewel and Md. Rafiqul Islam}, journal={2013 2nd International Conference on Advances in Electrical Engineering (ICAEE)}, year={2013}, pages={89-93} }