Extrinsic Effects on the Optical Properties of Surface Color Defects Generated in Hexagonal Boron Nitride Nanosheets

  title={Extrinsic Effects on the Optical Properties of Surface Color Defects Generated in Hexagonal Boron Nitride Nanosheets},
  author={Marie Kre{\vc}marov{\'a} and Rodolfo Canet-Albiach and Hamid Pashaei-Adl and Setatira Gorji and Guillermo Mu{\~n}oz-Matutano and Milos Nesladek and Juan P. Mart{\'i}nez‐Pastor and Juan Francisco S{\'a}nchez-Royo},
  journal={ACS Applied Materials \& Interfaces},
  pages={46105 - 46116}
Hexagonal boron nitride (hBN) is a wide-band gap van der Waals material able to host light-emitting centers behaving as single photon sources. Here, we report the generation of color defects in hBN nanosheets dispersed on different kinds of substrates by thermal treatment processes. The optical properties of these defects have been studied using microspectroscopy techniques and far-field simulations of their light emission. Using these techniques, we have found that subsequent ozone treatments… 
3 Citations

Figures from this paper

Quantum emitter formation in carbon-doped monolayer hexagonal boron nitride
Single photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising candidates for quantum light generation. Despite this, techniques to control the formation of hBN SPEs down to the


Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride
Defect centers in hexagonal boron nitride represent room-temperature single-photon sources in a layered van der Waals material. These light emitters appear with a wide range of transition energies
Influence of point defects on the near edge structure of hexagonal boron nitride
Hexagonal boron nitride (hBN) is a wide-band-gap semiconductor with applications including gate insulation layers in graphene transistors, far-ultraviolet light emitting devices and as hydrogen
Native point defects and impurities in hexagonal boron nitride
Recently hexagonal boron nitride (h-BN) has attracted a lot of attention because of discovery of single-photon emitters (SPEs) in monolayer, multi-layer and bulk [1−4]. Single photon emission
Selective Defect Formation in Hexagonal Boron Nitride
Luminescent defects in hexagonal boron nitride (hBN) have emerged as promising single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to
Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes.
Density functional theory calculations indicate the existence of competition between the intralayer and interlayer interaction contributions, which leads to the different pressure-dependent behaviors of the PL peak shift.
First-principles investigation of quantum emission from hBN defects.
DFT and constrained DFT calculations for a range of hBN point defects are performed and it is found that the CBVN defect, in which a carbon atom substitutes a boron atom and the opposite nitrogen atom is removed, is a potential emission source with a HR factor in good agreement with the experimental HR factor.
Localized emission from laser-irradiated defects in 2D hexagonal boron nitride
Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional (2D) material for photonics device due to its large bandgap and flexibility in nanophotonic circuits. Here, we report bright
Color Centers in Hexagonal Boron Nitride Monolayers: A Group Theory and Ab Initio Analysis
We theoretically study physical properties of the most promising color center candidates for the recently observed single-photon emissions in hexagonal boron nitride (h-BN) monolayers. Through our
Wide-Field Spectral Super-Resolution Mapping of Optically Active Defects in Hexagonal Boron Nitride.
The potential of wide-field spectral single-molecule localization microscopy (SMLM) for the determination of ensemble spectral properties as well as the characterization of spatial, spectral, and temporal dynamics of single defects in CVD-grown and irradiated exfoliated hexagonal boron-nitride materials is demonstrated.
Engineering and Tuning of Quantum Emitters in Few-Layer Hexagonal Boron Nitride.
Chemical vapor deposition growth of large-area, few-layer hBN films that host large quantities of SPEs are demonstrated and tuning of the ZPL wavelength using ionic liquid devices over a spectral range of up to 15 nm-the largest obtained to date from any solid-state SPE.