Extremely high transconductance (above 500 mS/mm) MOSFET with 2.5 nm gate oxide

@article{Horiguchi1985ExtremelyHT,
  title={Extremely high transconductance (above 500 mS/mm) MOSFET with 2.5 nm gate oxide},
  author={S. Horiguchi and T. Kobayashi and M. Miyake and M. Oda and K. Kiuchi},
  journal={1985 International Electron Devices Meeting},
  year={1985},
  pages={761-763}
}

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