Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism.

Abstract

A WSe2 -based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 × 10(7) at 180 K (3 × 10(4) at room temperature). These features originate from a trap-assisted tunneling process involving WSe2 defect states aligned… (More)
DOI: 10.1002/adma.201506004

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