Extreme High-Performance n- and p-MOSFETs Boosted by Dual-Metal/High-k Gate Damascene Process using Top-Cut Dual Stress Liners on (100) Substrates

@article{Mayuzumi2007ExtremeHN,
  title={Extreme High-Performance n- and p-MOSFETs Boosted by Dual-Metal/High-k Gate Damascene Process using Top-Cut Dual Stress Liners on (100) Substrates},
  author={Satoru Mayuzumi and J. Wang and Shinya Yamakawa and Yasushi Tateshita and Tomoyuki Hirano and Mitsuru Nakata and Shimpei Yamaguchi and Yasuhiro Yamamoto and Y. Miyanami and I. Oshiyama and Kei Tanaka and K. Tai and Kazuhisa Ogawa and Kaori Kugimiya and Yohei Nagahama and Yuri Hagimoto and Ryohei Yamamoto and Shouhei Kanda and Kouichi Nagano and Hitoshi Wakabayashi and Yoshiyuki Tagawa and Masanori Tsukamoto and Hayato Iwamoto and Masao Saito and Shota Kadomura and N.. Nagashima},
  journal={2007 IEEE International Electron Devices Meeting},
  year={2007},
  pages={293-296}
}
Extreme high-performance n- and pFETs are achieved as 1300 and 1000 uA/um at Ioff = 100 nA/um and Vdd = 1.0 V, respectively, by applying newly proposed booster technologies. The combination of top-cut dual-stress liners and damascene gate remarkably enhances channel stress especially for shorter gate lengths. High-Ion pFETs with compressive stress liners and embedded SiGe source/drain are performed by using ALD-TiN/HfO2 damascene gate stacks with Tinv = 1.4 nm on (100) substrates. On the other… CONTINUE READING
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