Extraction of the average collector velocity in high-speed NpN InP/GaAsSb/InP DHBTs

@article{Liu2004ExtractionOT,
  title={Extraction of the average collector velocity in high-speed NpN InP/GaAsSb/InP DHBTs},
  author={H. G. Liu and Narong Tao and S. Watkins and C. R. Bolognesi},
  journal={16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004.},
  year={2004},
  pages={556-557}
}
In "type-II" NpN InP/GaAsSb/InP double heterostructure bipolar transistors (DHBTs), the p/sup +/ GaAsSb base conduction band edge lies /spl Delta/E/sub C/ above the InP collector conduction band: a small ballistic energy /spl Delta/E/sub C/ is imparted to collected electrons as they are launched into the collector. The high initial velocity should in principle reduce the collector signal delay time. In the present work, we extract the average collector electron velocity in high-speed InP/GaAsSb… CONTINUE READING

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Comparative collector design in InGaAs and GaAsSb based InP DHBTs

  • 2008 20th International Conference on Indium Phosphide and Related Materials
  • 2008
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