Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics

@article{Madan2012ExtractionON,
  title={Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics},
  author={Himanshu Madan and Matthew J. Hollander and J. W. A. Robinson and Suman Datta},
  journal={70th Device Research Conference},
  year={2012},
  pages={181-182}
}
Graphene as a material has created a lot of interest due to properties like high saturation velocity, high current carrying capacity, ambipolar characteristics and high transconductance. These properties make graphene based transistors a promising candidate for high frequency applications. Recently, there have been demonstration of RF mixers with graphene transistors. Traditional DC measurements are not sufficient when considering graphene transistors for high frequency circuit design, making… CONTINUE READING