Extraction of Density of States in Amorphous GaInZnO Thin-Film Transistors by Combining an Optical Charge Pumping and Capacitance–Voltage Characteristics

@article{Park2008ExtractionOD,
  title={Extraction of Density of States in Amorphous GaInZnO Thin-Film Transistors by Combining an Optical Charge Pumping and Capacitance–Voltage Characteristics},
  author={J. Park and Kichan Jeon and SangWon Lee and Sunil Kim and Sangwook Kim and Ihun Song and Chang Jung Kim and Jaechul Park and Youngsoo Park and Dong Myong Kim},
  journal={IEEE Electron Device Letters},
  year={2008},
  volume={29},
  pages={1292-1295}
}
A technique for extracting the acceptorlike density of states (DOS) of <i>n</i>-channel amorphous GaInZnO (a-GIZO) thin-film transistors based on the combination of subbandgap optical charge pumping and <i>C</i>-<i>V</i> characteristics is proposed. While the energy level is scanned by the photon energy and the gate voltage sweep, its density is extracted from the optical response of <i>C</i>-<i>V</i> characteristics. The extracted DOS shows the superposition of the exponential tail states and… CONTINUE READING
Highly Cited
This paper has 34 citations. REVIEW CITATIONS

Citations

Publications citing this paper.
Showing 1-10 of 21 extracted citations

References

Publications referenced by this paper.
Showing 1-7 of 7 references

Effects of oxygen gas pressure on structural, electrical, and thermoelectric properties of (ZnO)3In2O3 thin films deposited by rf magnetron sputtering

  • Y. Orikasa, N. Hayashi, S. Muranaka
  • J. Appl. Phys., vol. 103, no. 11, pp. 113 703-1…
  • 2008
2 Excerpts

Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

  • H.-H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, C.-C. Wu
  • Appl. Phys. Lett., vol. 92, no. 13, pp. 133 503-1…
  • 2008
1 Excerpt

Trap densities in amorphous-InGaZnO4 thin-film transistors

  • M. Kimura, T. Nakanishi, K. Nomura, T. Kamiya, H. Hosono
  • Appl. Phys. Lett., vol. 92, no. 13, pp. 133 512-1…
  • 2008
1 Excerpt

Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors

  • R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Gonçalves, E. Fortunato
  • J. Appl. Phys., vol. 101, no. 4, pp. 044 505-1…
  • 2007

High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature

  • E. Fortunato, A. Pimentel, A. Gonçalves, A. Marques, R. Martins
  • Thin Solid Films, vol. 502, no. 1/2, pp. 104–107…
  • 2006
1 Excerpt

Similar Papers

Loading similar papers…