Extraction of 3-D trap position in NAND flash memory considering channel resistance of pass cells and bit-line interference


We have extracted the exact position (xT and yT) and energy of a trap in tunnel oxide which induces RTN by considering the channel resistances of pass cells in floating gate NAND flash memory string. Moreover, the trap position (zT) along the channel width direction was also extracted by using an interference between adjacent bit-lines. 


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