Extraction noise transport time (τ) and its impact over the four noise parameters of advanced SiGe HBT

Abstract

This paper introduces some results concerning the high frequency noise analysis, along with the noise transport time (r) extraction and its impact over the microwave noise performances of SiGe heterojunction bipolar transistors (HBT). Our methodology of noise analysis can be extended to investigate the impact of the technological variations of the base over the microwave noise performances of high speed SiGe HBTs.

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Cite this paper

@article{LuisPineda2012ExtractionNT, title={Extraction noise transport time (τ) and its impact over the four noise parameters of advanced SiGe HBT}, author={L. F. Luis-Pineda and E. Ramirez-Garcia and N. Zerounian and F. Aniel and M. A. E. Aguilar}, journal={2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)}, year={2012}, pages={1-4} }