Extracting Energy Band Offsets on Long-Channel Thin Silicon-on-Insulator MOSFETs

@article{Steen2009ExtractingEB,
  title={Extracting Energy Band Offsets on Long-Channel Thin Silicon-on-Insulator  MOSFETs},
  author={J.-L.P.J. van der Steen and R. J. E. Hueting and Jurriaan Schmitz},
  journal={IEEE Transactions on Electron Devices},
  year={2009},
  volume={56},
  pages={1999-2007}
}
Structural quantum confinement in long-channel thin silicon-on-insulator MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in the threshold voltage. Data were obtained from simulations after initial verification with experimental data. This study demonstrates that, with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted distinctively from changes… CONTINUE READING

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