Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor

@article{Chen2008ExternallyAG,
  title={Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor},
  author={Zhihong Chen and Damon B. Farmer and Sheng Xu and Roy G. Gordon and Phaedon Avouris and Joerg Appenzeller},
  journal={IEEE Electron Device Letters},
  year={2008},
  volume={29},
  pages={183-185}
}
In this letter, we demonstrate a gate-all-around single-wall carbon nanotube field-effect transistor. This is the first successful experimental implementation of an off-chip gate and gate-dielectric assembly with subsequent deposition on a suitable substrate. The fabrication process and device measurements are discussed in the letter. We also argue in how far charges in the gate oxide are responsible for the observed nonideal device performance. 

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