Extending the bounds of performance in E-mode p-channel GaN MOSHFETs

@article{Kumar2016ExtendingTB,
  title={Extending the bounds of performance in E-mode p-channel GaN MOSHFETs},
  author={Ashwani Kumar and M. M. De Souza},
  journal={2016 IEEE International Electron Devices Meeting (IEDM)},
  year={2016},
  pages={7.4.1-7.4.4}
}
An investigation of the distribution of the electric field within a normally-off p-channel heterostructure field-effect transistor in GaN, explains why a high |V<inf>th</inf>| requires a reduction of the thickness of oxide and the GaN channel layer. The trade-off between on-current |I<inf>on</inf>| and |V<inf>th</inf>|, responsible for the poor |I<inf>ON</inf>| in E-mode devices is overcome with an additional cap AlGaN layer that modulates the electric field in itself and the oxide. A record |I… CONTINUE READING