Extended scalability of perpendicular STT-MRAM towards sub-20nm MTJ node

@article{Kim2011ExtendedSO,
  title={Extended scalability of perpendicular STT-MRAM towards sub-20nm MTJ node},
  author={Woojin Kim and J. H. Jeong and Y. Kim and Woo Chang Lim and J H Kim and J. H. Park and H. J. Shin and Y. S. Park and K. S. Kim and S H Park and Y. J. Lee and Kanguk Kim and H. J. Kwon and Heewoo Park and H. S. Ahn and S. C. Oh and J. E. Lee and S. O. Park and Siyoung Q Choi and H. K. Kang and C. Chung},
  journal={2011 International Electron Devices Meeting},
  year={2011},
  pages={24.1.1-24.1.4}
}
In this article, we report the first experimental demonstration of sub-20nm MTJ cells for investigating the downscaling feasibility of spin-transfer torque (STT) MRAM, one of the most promising candidates to replace conventional memories. We demonstrate the STT switching of 17nm node P-MTJ cells, the smallest feature size ever reported, utilizing perpendicular materials possessing high interface anisotropy of 2.5 erg/cm2 and improved integration processes to achieve reproducible switching with… CONTINUE READING
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