Exploring the Stability of Twisted van der Waals Heterostructures.

  title={Exploring the Stability of Twisted van der Waals Heterostructures.},
  author={Andrea Silva and Victor E. P. Claerbout and Tom{\'a}s Polcar and Denis Kramer and Paolo Nicolini},
  journal={ACS applied materials \& interfaces},
Recent research showed that the rotational degree of freedom in stacking 2D materials yields great changes in the electronic properties. Here, we focus on an often overlooked question: are twisted geometries stable and what defines their rotational energy landscape? Our simulations show how epitaxy theory breaks down in these systems, and we explain the observed behaviour in terms of an interplay between flexural phonons and the interlayer coupling, governed by moir\'e superlattice. Our… 
Twisted graphene stabilized by organic linkers pillaring
Twisted graphene, including magic angle graphene, has attracted extensive attentions for its novel properties recently. However, twisted graphene is intrinsically unstable and this will obstruct
Quantum interference tuning of spin-orbit coupling in twisted van der Waals trilayers
Csaba G. Péterfalvi, ∗ Alessandro David, Péter Rakyta, 4 Guido Burkard, † and Andor Kormányos ‡ Department of Physics, University of Konstanz, D-78464 Konstanz, Germany Peter Grünberg Institute –
Reorganization Energy upon Controlled Intermolecular Charge-Transfer Reactions in Monolithically Integrated Nanodevices.
It is shown that self-rolling nanomembrane devices with strain-engineered mechanical properties, on-a-chip monolithic integration, and multi-environment operation features can overcome the challenge of determining the reorganization energy of a system formed by molecules monolithically integrated into electrochemical nanodevices.
UItra-low friction and edge-pinning effect in large-lattice-mismatch van der Waals heterostructures
The superlubricity phenomenon and the edge-pinning effect at MoS 2 /graphite and MoS2 /hexagonal boron nitride van der Waals heterostructure interfaces are reported and the friction coefficients are found to be below 10 −6.
Highly efficient electrochemical energy conversion in a 3D hollow microenvironment: towards on-a-chip sensor applications
Multipurpose analytical platforms that can reliably be adapted to distinct targets are essential nowadays. Here, the conception, characterization, and application of ultracompact three-dimensional


Modulating PL and electronic structures of MoS2/graphene heterostructures via interlayer twisting angle
Stacking two-dimensional materials into van der Waals heterostructures with distinct interlayer twisting angles opens up new strategies for electronic structure and physical property engineering.
Controlling Rotation of Two-Dimensional Material Flakes.
A general moiré-driven mechanism that governs the interlayer rotation of van der Waals structures of two-dimensional materials is revealed and mismatch strain engineering is demonstrated as a useful tool to design the inter layer rotation via changing the energy landscape ofmoiré within a finite-sized region.
Twist angle-dependent conductivities across MoS2/graphene heterojunctions
The experimental investigation of the twist angle-dependent conductivities in MoS2/graphene van der Waals heterojunctions found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°.
Van der Waals heterostructures and devices
Two-dimensional layered materials (2DLMs) have been a central focus of materials research since the discovery of graphene just over a decade ago. Each layer in 2DLMs consists of a covalently bonded,
2D materials and van der Waals heterostructures
Two-dimensional heterostructures with extended range of functionalities yields a range of possible applications, and spectrum reconstruction in graphene interacting with hBN allowed several groups to study the Hofstadter butterfly effect and topological currents in such a system.
Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene.
The thickness-controlled van der Waals epitaxial growth of MoS2 on EG via chemical vapor deposition is demonstrated, giving rise to transfer-free synthesis of a two-dimensional heterostructure with registry between its constituent materials.
Graphite edge controlled registration of monolayer MoS2 crystal orientation
Transition metal dichalcogenides such as the semiconductor MoS2 are a class of two-dimensional crystals. The surface morphology and quality of MoS2 grown by chemical vapor deposition are examined
Graphene on h-BN: to align or not to align?
Subsequent sliding simulations show that friction of graphene on h-BN, small and essentially independent of misalignments in the artificial frozen state, strongly increases in the more realistic corrugated, strain-modulated, aligned state.