Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon

An experimental method using a CMOS image sensor as test device is used to study the kinetics of formation and annealing of Single Particle Displacement Damage (SPDD) events in arrays of silicon microvolumes. The dark current level is monitored in real time under neutron irradiation, allowing to detect SPDD events and follow their subsequent annealing… CONTINUE READING