Exploring carrier transport phenomena in a CVD-assembled graphene FET on hexagonal boron nitride.

@article{Kim2012ExploringCT,
  title={Exploring carrier transport phenomena in a CVD-assembled graphene FET on hexagonal boron nitride.},
  author={Edwin Kim and Nikhil Jai and Robin Jacobs-Gedri and Yang Xu and Bin Yu},
  journal={Nanotechnology},
  year={2012},
  volume={23 12},
  pages={125706}
}
The supporting substrate plays a crucial role in preserving the superb electrical characteristicsof an atomically thin 2D carbon system. We explore carrier transport behavior in achemical-vapor-deposition- (CVD-) assembled graphene monolayer on hexagonal boron nitride (h-BN) substrate. Graphene-channel field-effect transistors (GFETs) were fabricated on ultra-thin h-BN multilayers to screen out carrier scattering from the underlying SiO2 substrate. To explore the transport phenomena, we use… CONTINUE READING
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Confocal Raman Microscopy (Heidelberg: Springer

  • T Dieing, O Hollricher, J Toporski
  • 2010
1 Excerpt

Semiconductor Material and Device Characterization (Hoboken, NJ: Wiley

  • D KSchroder
  • 2006
1 Excerpt

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