Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials

@article{Li2011ExplorePO,
  title={Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials},
  author={Jing Li and Binquan Luan and T. H. Hsu and Yu Zhu and Glenn J. Martyna and D. M. Newns and H. Y. Cheng and Simone Raoux and H. L. Lung and C. H. Lam},
  journal={2011 International Electron Devices Meeting},
  year={2011},
  pages={12.5.1-12.5.4}
}
In this paper, we developed a theory to explain the physical origins of drift mechanism in amorphous Germanium (Ge), antimony (Sb), and tellurium (Te) ternary alloys (GST). The interrelationship between atomic structure and electrical characteristics were extensively studied by first principle Ab initio method and material/device characterization. The proposed method provides an effective guidance to develop drift-insensitive phase change material. 

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