Exploration of selector characteristic based on electron tunneling for RRAM array application

@article{Song2017ExplorationOS,
  title={Exploration of selector characteristic based on electron tunneling for RRAM array application},
  author={Bing Song and Qingjiang Li and Husheng Liu and Haijun Liu},
  journal={IEICE Electronic Express},
  year={2017},
  volume={14},
  pages={20170739}
}
Selector is indispensable to suppress leakage current for crossbar array of resistive random access memory. According to the nonlinear requirement, electron tunneling mechanism is firstly attempted. However, earlier studies discovered drawbacks of insufficient current density. This work aims at exploring the idealized characteristic of selector based on FowlerNordheim tunneling mechanism by selecting various materials and structures. Thereinto, current density transforms to drive voltage… CONTINUE READING
1 Citations
22 References
Similar Papers

Citations

Publications citing this paper.

References

Publications referenced by this paper.
Showing 1-10 of 22 references

Similar Papers

Loading similar papers…