Experiments on Minority Carrier Diffusion in Silicon: Contributions of Excitons

Abstract

Experiments on minority carrier diffusion using an a.c. photocurrent method exhibit very good agreement with Klaassens’s model [1] at temperatures 250K 500K, but very large deviations at 100K and intermediate doping levels. They can be perfectly explained using published results on exciton diffusion constants and on concentrations of excitons in electron… (More)

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