Experimental study of 112 Gb/s short reach transmission employing PAM formats and SiP intensity modulator at 1.3 μm.

Abstract

We present a Silicon Photonic (SiP) intensity modulator operating at 1.3 μm with pulse amplitude modulation formats for short reach transmission employing a digital to analog converter for the RF signal generator, enabling pulse shaping and precompensation of the transmitter's frequency response. Details of the SiP Mach-Zehnder interfometer are presented. We study the system performance at various bit rates, PAM orders and propagation distances. To the best of our knowledge, we report the first demonstration of a 112 Gb/s transmission over 10 km of SMF fiber operating below pre-FEC BER threshold of 3.8 × 10(-3) employing PAM-8 at 37.4 Gbaud using a fully packaged SiP modulator. An analytical model for the Q-factor metric applicable for multilevel PAM-N signaling is derived and accurately experimentally verified in the case of Gaussian noise limited detection. System performance is experimentally investigated and it is demonstrated that PAM order selection can be optimally chosen as a function of the desired throughput. We demonstrate the ability of the proposed transmitter to exhibit software-defined transmission for short reach applications by selecting PAM order, symbol rate and pulse shape.

DOI: 10.1364/OE.22.021018

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Cite this paper

@article{Chagnon2014ExperimentalSO, title={Experimental study of 112 Gb/s short reach transmission employing PAM formats and SiP intensity modulator at 1.3 μm.}, author={Mathieu Chagnon and M. Osman and Michel Poulin and Christine Latrasse and J. Gagne and Yves Painchaud and Carl Paquet and St{\'e}phane Lessard and David V. Plant}, journal={Optics express}, year={2014}, volume={22 17}, pages={21018-36} }