Experimental realization of a silicon spin field-effect transistor

@article{Huang2007ExperimentalRO,
  title={Experimental realization of a silicon spin field-effect transistor},
  author={Biqin Huang and D. Monsma and Ian Appelbaum University of Delaware and Cambridge NanoTech Inc.},
  journal={Applied Physics Letters},
  year={2007},
  volume={91},
  pages={072501}
}
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin direction at the spin detector and hence the output collector current, this comprises a spin field-effect transistor. An improved hot-electron spin injector providing ≈115% magnetocurrent, corresponding to at least ≈37% electron current spin polarization after… Expand

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References

SHOWING 1-10 OF 44 REFERENCES
Electrical spin injection and threshold reduction in a semiconductor laser.
Spin injection and detection in silicon.
...
1
2
3
4
5
...