Experimental investigation of Si IGBT short circuit capability at 200°C

@article{Xu2012ExperimentalIO,
  title={Experimental investigation of Si IGBT short circuit capability at 200°C},
  author={Zhuxian Xu and Fei Fred Wang},
  journal={2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC)},
  year={2012},
  pages={162-168}
}
This paper investigates the short-circuit capability and the failure mechanisms of Si trench gate field-stop IGBT under high temperature operation conditions through experiments. First, the test circuits are proposed for IGBT short circuit capability evaluation in different types of short circuit conditions. A hardware setup is built accordingly, and used to evaluate experimentally the IGBT short circuit failures caused by thermal destruction, thermal runaway and latch-up at both 25°C and 200°C… CONTINUE READING