Experimental determination of electron and hole mobilities in MOS accumulation layers

@article{McKeon1997ExperimentalDO,
  title={Experimental determination of electron and hole mobilities in MOS accumulation layers},
  author={J. B. McKeon and G. Chindalore and S. Hareland and W.-K. Shih and Chengfeng Wang and Andreas Tasch and C. M. Maziar},
  journal={IEEE Electron Device Letters},
  year={1997},
  volume={18},
  pages={200-202}
}
This letter presents for the first time, the experimentally determined majority carrier mobilities in the accumulation layer of a MOSFET for both p-type and n-type channel doping for a wide range of doping concentrations. The measured carrier mobility is observed to follow a universal behavior at high transverse fields, similar to that observed for minority carriers in MOS inversion layers. At the higher doping levels, the effective mobility for majority carriers at low to moderate transverse… CONTINUE READING

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