Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.

@article{He2013ExperimentalDO,
  title={Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.},
  author={K. He and C. Poole and K. Mak and J. Shan},
  journal={Nano letters},
  year={2013},
  volume={13 6},
  pages={
          2931-6
        }
}
We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, has been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of two-dimensional crystals for… Expand

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References

SHOWING 1-10 OF 48 REFERENCES
Atomically thin MoS₂: a new direct-gap semiconductor.
TLDR
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced. Expand
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
AbstractThe electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS2) subjected to biaxial strain have been investigated using first-principles calculations basedExpand
Emerging photoluminescence in monolayer MoS2.
TLDR
This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale. Expand
Robust optical emission polarization in MoS2 monolayers through selective valley excitation
We report polarization resolved photoluminescence from monolayer MoS2, a two-dimensional, noncentrosymmetric crystal with direct energy gaps at two different valleys in momentum space. The inherentExpand
Tightly bound trions in monolayer MoS2.
TLDR
The spectroscopic identification in a monolayer MoS(2) field-effect transistor of tightly bound negative trions, a quasiparticle composed of two electrons and a hole is reported, which has no analogue in conventional semiconductors. Expand
Observation of intense second harmonic generation from MoS 2 atomic crystals
The nonlinear optical properties of few-layer MoS${}_{2}$ two-dimensional crystals are studied using femtosecond laser pulses. We observed highly efficient second-harmonic generation from theExpand
Effects of strain on electronic properties of graphene
We present first-principles calculations of electronic properties of graphene under uniaxial and isotropic strains, respectively. The semimetallic nature is shown to persist up to a very largeExpand
Tuning Magnetism and Electronic Phase Transitions by Strain and Electric Field in Zigzag MoS2 Nanoribbons.
TLDR
It is shown by first-principles calculations that the magnetic and electronic properties of zigzag MoS2NRs exhibit sensitive response to applied strain and electric field, suggesting a robust and efficient approach to modulating the properties of MoS 2NRs by a combination of strain engineering andElectric field tuning. Expand
Tight-binding approach to uniaxial strain in graphene
We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, weExpand
Valley polarization in MoS2 monolayers by optical pumping.
TLDR
It is demonstrated that optical pumping with circularly polarized light can achieve a valley polarization of 30% in pristine monolayer MoS(2), demonstrating the viability of optical valley control and valley-based electronic and optoelectronic applications in MoS (2) monolayers. Expand
...
1
2
3
4
5
...