Experimental cryogenic modeling and noise of SiGe HBTs

@article{Bardin2008ExperimentalCM,
  title={Experimental cryogenic modeling and noise of SiGe HBTs},
  author={Joseph C. Bardin and Sander Weinreb},
  journal={2008 IEEE MTT-S International Microwave Symposium Digest},
  year={2008},
  pages={459-462}
}
SiGe devices are an exciting contender for extremely low noise, cryogenically cooled amplifiers. This paper begins with a procedure for extracting a simple equivalent circuit model capable of accurately describing SiGe HBT devices. Next, small-signal modeling results obtained for a 3×0.12×18um2 SiGe HBT at 15, 40, 77, 120, 200, and 300K are presented along with discussion of performance enhancements due to cooling of the device. Finally, the modeled noise performance is presented as a function… CONTINUE READING