Experimental Observation of High Intrinsic Thermal Conductivity of AlN

@article{Cheng2019ExperimentalOO,
  title={Experimental Observation of High Intrinsic Thermal Conductivity of AlN},
  author={Z. Cheng and Y. Koh and A. Mamun and J. Shi and Tingyu Bai and Kenny Huynh and Luke Yates and Ze-yu Liu and Ruiyang Li and E. Lee and Michael Liao and Yekan Wang and H. Yu and M. Kushimoto and T. Luo and M. Goorsky and P. Hopkins and H. Amano and Asif Khan and S. Graham},
  journal={arXiv: Materials Science},
  year={2019}
}
  • Z. Cheng, Y. Koh, +17 authors S. Graham
  • Published 2019
  • Materials Science, Physics
  • arXiv: Materials Science
  • AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted… CONTINUE READING
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