Experimental Investigations of Electron Mobility in Silicon Nanowire nMOSFETs on (110) Silicon-on-Insulator

Abstract

Investigations on electron mobility characteristics in gate-all-around silicon nanowire nMOSFETs on (110)-oriented silicon-on-insulator substrates have been described on the basis of the advanced split capacitance-voltage (C- V) method. It is found that the electron mobility in [110]-directed nanowires approaches and is even higher than that in [100… (More)

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