Experimental Characterization of the Influence of Transverse Prestrain on the Piezoresistive Coefficients of Heavily Doped n-Type Silicon

@article{Balbola2018ExperimentalCO,
  title={Experimental Characterization of the Influence of Transverse Prestrain on the Piezoresistive Coefficients of Heavily Doped n-Type Silicon},
  author={Amr A. Balbola and Mohammed O. Kayed and Walied A. Moussa},
  journal={IEEE Transactions on Electron Devices},
  year={2018},
  volume={65},
  pages={5002-5008}
}
Strain has been integrated into many silicon devices, as it has an essential impact on carrier mobility and crystal symmetry. Those parameters respond differently under both biaxial and uniaxial, so their effect needs to be quantified to successfully employ the strain engineering in different silicon applications. As an extended step toward utilizing strain in enhancing the sensitivity and the temperature independency of a 3-D stress sensor, the effect of uniaxial transverse strain onto the… CONTINUE READING

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