Exciton – erbium energy transfer in Si nanocrystal-doped SiO 2

@inproceedings{Kik2001ExcitonE,
  title={Exciton – erbium energy transfer in Si nanocrystal-doped SiO 2},
  author={Pieter G Kik and Albert J Polman},
  year={2001}
}
Silicon nanocrystals were formed in SiO2 using Si ion implantation followed by thermal annealing. The nanocrystal-doped SiO2 layer was implanted with Er to peak concentrations ranging from 0.015 to 1.8 at.%. Upon 458 nm excitation, a broad nanocrystal-related luminescence spectrum centered around 750 nm and two sharp Er luminescence lines at 982 and 1536 nm are observed. By measuring the temperature-dependent intensities and luminescence dynamics at a fixed Er concentration, and by measuring… CONTINUE READING
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