Excimer laser annealed poly-Si thin film transistor with self-aligned lightly doped drain structure

@inproceedings{Kim2003ExcimerLA,
  title={Excimer laser annealed poly-Si thin film transistor with self-aligned lightly doped drain structure},
  author={Yong-Hae Kim and Chi-Sun Hwang and Yoon-Ho Song and Choong-Heui Chung and Young-Wook Ko and Choong-Yong Sohn and Bong-Chul Kim and Jin Ho Lee},
  year={2003}
}
Abstract We have made an excimer laser annealed poly-Si thin film transistor (TFT). The stress of the poly-Si films crystallized by excimer laser annealing is studied by Raman spectroscopy. The transverse-optic phonon frequency is independent of the excimer laser energy, but dependant on the precursor a-Si film thickness. The nMOS TFT with a self-aligned lightly doped drain (LDD) structure shows low leakage current. The large leakage current of the pMOS TFT with non-LDD structure is reduced by… CONTINUE READING