Exceptional ballistic transport in epitaxial graphene nanoribbons

  title={Exceptional ballistic transport in epitaxial graphene nanoribbons},
  author={J. Baringhaus and M. Ruan and F. Edler and A. Tejeda and M. Sicot and A. Taleb-Ibrahimi and A. Li and Z. Jiang and E. Conrad and C. Berger and C. Tegenkamp and W. Heer},
  • J. Baringhaus, M. Ruan, +9 authors W. Heer
  • Published 2014
  • Materials Science, Medicine, Physics
  • Nature
  • Graphene nanoribbons will be essential components in future graphene nanoelectronics. However, in typical nanoribbons produced from lithographically patterned exfoliated graphene, the charge carriers travel only about ten nanometres between scattering events, resulting in minimum sheet resistances of about one kilohm per square. Here we show that 40-nanometre-wide graphene nanoribbons epitaxially grown on silicon carbide are single-channel room-temperature ballistic conductors on a length scale… CONTINUE READING

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    Publications referenced by this paper.
    Electronic Confinement and Coherence in Patterned Epitaxial Graphene
    • 4,339
    • PDF
    Energy band-gap engineering of graphene nanoribbons.
    • 3,916
    • Highly Influential
    • PDF
    Scalable templated growth of graphene nanoribbons on SiC.
    • 333
    • PDF
    Carbon nanotube quantum resistors
    • 1,651
    • PDF