Excellent charge offset stability in Si-based SET transistors

@article{Zimmerman2002ExcellentCO,
  title={Excellent charge offset stability in Si-based SET transistors},
  author={N. M. Zimmerman and W. H. Huber and Akira Fujiwara and Yasuo Takahashi},
  journal={Conference Digest Conference on Precision Electromagnetic Measurements},
  year={2002},
  pages={124-125}
}
We have obtained a large improvement in one aspect of the single-electron tunneling (SET) charge offset, Q/sub 0/, problem. The long-term drift of Q/sub 0/ makes it infeasible or impossible to integrate many devices. In contrast to metal-based SET transistors (SETTs), the long-term drift in Si-based SETTs appears to be at least one thousand times smaller (better). 

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Zimmennan , William H . Huber , Akua Fujiwara , Yasuo Takahashi “ Excellent Charge Offset Stability in a Si - Based Sirrgle - Eleceon Tunneling Transistor ”

  • M. Neil
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