Evolution of current filaments limiting the safe-operating area of high-voltage trench-IGBTs

@article{Toechterle2014EvolutionOC,
  title={Evolution of current filaments limiting the safe-operating area of high-voltage trench-IGBTs},
  author={C. Toechterle and F. Pfirsch and Christian Philipp Sandow and Gerhard Wachutka},
  journal={2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)},
  year={2014},
  pages={135-138}
}
An improved understanding of the physical processes leading to the formation of current filaments and latch-up in large arrays of monolithically integrated high voltage (3.3kV) trench-IGBT cells during the turn-off process of the device is the prerequisite for enhancing the robustness of the device. To this end, numerical simulations have been performed revealing the rim of the safe-operating area (SOA) and what happens beyond it. 
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