Evidence of the two surface states of (Bi0.53Sb0.47)2Te3 films grown by van der Waals epitaxy


The discovery of topological insulators (TIs) has led to numerous exciting opportunities for studying topological states of quantum physics and for exploring spintronic applications due to the new physics arising from their robust metallic surface states. Here, we report the high-quality topological insulator (BixSb1-x)2Te3 thin films using a single van der Waals GaSe buffer layer. As a result, ultra-low surface carrier density of 1.3 × 10(12) cm(-2) and a high Hall mobility of 3100 cm(2)/Vs have been achieved for (Bi0.53Sb0.47)2Te3. The high-quality films enable us to observe quantum oscillations associated with the top and bottom surface states and to manipulate the Dirac electrons and bulk holes' conduction properties. The observation of the two surface states may lead to a path towards the implementation of TIs in spintronics.

DOI: 10.1038/srep03406

Extracted Key Phrases

3 Figures and Tables

Cite this paper

@inproceedings{He2013EvidenceOT, title={Evidence of the two surface states of (Bi0.53Sb0.47)2Te3 films grown by van der Waals epitaxy}, author={Liang He and Xufeng Kou and M . G . Lang and Eun Sang Choi and Ying Jiang and Tianxiao Nie and Wanjun Jiang and Yabin Fan and Yong Wang and Faxian Xiu and Kang L. Wang}, booktitle={Scientific reports}, year={2013} }