• DOI:10.1103/PHYSREVLETT.95.225502
• Corpus ID: 10530150

Evidence for native-defect donors in n-type ZnO.

@article{Look2005EvidenceFN,
  title={Evidence for native-defect donors in n-type ZnO.},
  author={David C. Look and Gary Colbert Farlow and Pakpoom Reunchan and Sukit Limpijumnong and S. B. Zhang and Kai Nordlund},
  journal={Physical review letters},
  year={2005},
  volume={95 22},
  pages={
          225502
        }
}

• D. Look, G. Farlow, +3 authors K. Nordlund
• Published 21 November 2005
• Materials Science
• Physical review letters

Recent theory has found that native defects such as the O vacancy V(O) and Zn interstitial Zn(I) have high formation energies in n-type ZnO and, thus, are not important donors, especially in comparison to impurities such as H. In contrast, we use both theory and experiment to show that, under N ambient, the complex Zn(I)-N(O) is a stronger candidate than H or any other known impurity for a 30 meV donor commonly found in bulk ZnO grown from the vapor phase. Since the Zn vacancy is also the dominant acceptor in such material, we must conclude that native defects are important donors and acceptors in ZnO.