Evidence for Non-Arrhenius Kinetics of Crystallization in Phase Change Memory Devices

@article{Ciocchini2013EvidenceFN,
  title={Evidence for Non-Arrhenius Kinetics of Crystallization in Phase Change Memory Devices},
  author={Nicola Ciocchini and Marco Cassinerio and Davide Fugazza and Daniele Ielmini},
  journal={IEEE Transactions on Electron Devices},
  year={2013},
  volume={60},
  pages={3767-3774}
}
The programming speed in a phase change memory (PCM) relies on the kinetics of crystallization in the pulsed regime. To predict the programming speed and retention of a PCM, a careful understanding and modeling of crystallization in the phase change material is essential. In this paper, we study crystallization kinetics directly in PCM devices. From thermal annealing and pulsed-set experiments, we extract the temperature dependence of the crystallization in a wide temperature range between 170… CONTINUE READING

Citations

Publications citing this paper.
Showing 1-10 of 10 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 31 references

Similar Papers

Loading similar papers…