Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

@article{Toprasertpong2020EvaluationOP,
  title={Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors},
  author={Kasidit Toprasertpong and Kento Tahara and Mitsuru Takenaka and Shinichi Takagi},
  journal={arXiv: Applied Physics},
  year={2020}
}
In this study, we propose a measurement technique for evaluating ferroelectric polarization characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard metal/ferroelectric/metal capacitors, the depletion and inversion phenomena in semiconductor substrates have to be carefully taken into account when evaluating the ferroelectric properties using fast voltage sweep as input. The non-equilibrium deep depletion is found to be the limiting factor for the accurate… 

Figures from this paper

Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing

Crystallization annealing is a key process for the formation of the ferroelectric phase in HfO2-based ferroelectric thin films. In this study, we systematically investigate the notable tradeoff of

Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach

Negative capacitance (NC) obtained from the ferroelectric polarization switching is a widely adopted approach for the realization of low power, high-performance devices. In this paper, for the first

Ge/GaAs Based Negative Capacitance Tunnel FET Biosensor: Proposal and Sensitivity Analysis

A highly sensitive, accurate, fast and power efficient biosensor is the need of the hour. Undoubtedly, dielectrically modulated (DM) tunnel FET (TFET) assures better sensitivity as compared to MOSFET

Growth of the orthorhombic phase and inhibition of charge injection in ferroelectric HfO2-based MFIS memory devices with a high-permittivity dielectric seed layer

The poor endurance of the ferroelectric (FE) HfO2 (Fe-HfO2) material-based FE field-effect transistor (Fe-FET) remains a major challenge for its future commercial production. Here we propose a high-κ

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Since the first report on the unexpected ferroelectricity of fluorite‐structure oxides in 2011, this topic has provided a pathway for new research directions and opportunities. Based on theoretical

Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application

Ferroelectric fin field-effect transistors with a trench structure (trench Fe-FinFETs) were fabricated and characterized. The inclusion of the trench structures improved the electrical

Demonstration of Improved Short Channel Performance Metrics for Ferroelectric Concentric Negative Capacitance FinFET

Using well-calibrated TCAD models, we have exhibited the application of both Dielectric (DE) and Ferroelectric (FE) materials as spacers in Negative Capacitance (NC) FinFET. We have proposed the

Reservoir computing on a silicon platform with a ferroelectric field-effect transistor

It is demonstrated that an FeFET-based reservoir computing system can successfully solve computational tasks on time-series data processing including nonlinear time series prediction after training with simple regression.

A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping

A transition from the monoclinic to ferroelectric orthorhombic phase, takes place within a region of few atomic layers of single HfO2 crystals. Atomic calculations show high stability of the

On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability

Ferroelectric field-effect transistors (FeFETs) have become an attractive technology for memory and emerging applications on a silicon electronic platform after the discovery of the ferroelectric

References

SHOWING 1-10 OF 37 REFERENCES

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

Ferroelectric Si:HfO2 has been investigated starting from metal-ferroelectric-metal (MFM) capacitors over metal-ferroelectric-insulator-semiconductor (MFIS) and finally ferroelectric

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

The recently discovered ferroelectric behavior of HfO2-based dielectrics yields the potential to overcome the main challenges of the ferroelectric field-effect transistors (FeFETs) - CMOS

Direct Observation of Interface Charge Behaviors in FeFET by Quasi-Static Split C-V and Hall Techniques: Revealing FeFET Operation

A quasi-static split C-V technique is proposed as a novel method to monitor ferroelectric polarization and charge distribution in FeFETs. In contrast to conventional split C-V, which is not

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

We report the fabrication of completely CMOS-compatible ferroelectric field-effect transistors (FETs) by stabilization of a ferroelectric phase in 10-nm-thin Si:HfO2. The program and erase operation

A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

The ferroelectric field effect has successfully been demonstrated on a bulk semiconductor (silicon) using a thin ferroelectric film of bismuth titanate (Bi 4 Ti 3 O 12 ) deposited onto it by RF

Ferroelectric Field Effect Transistors for Memory Applications

The fabrication and characterization of two promising capacitor-less memory architectures that marry the ferroelectric polarization directly to the channel of a field effect transistor is reported on.

Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors

Alternative interpretations that can explain the experimental results without invoking the NC effect are provided, and the experimental time-transient VF and QF could be precisely simulated by these alternative models that fundamentally assumes the reverse domain nucleation and growth.

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for

Use of negative capacitance to provide voltage amplification for low power nanoscale devices.

By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.

Dynamic leakage current compensation in ferroelectric thin-film capacitor structures

We report on a measurement procedure to separate ferroelectric switching current and dielectric displacement current from the leakage current in leaky ferroelectric thin-film capacitor structures.