Evaluation of high voltage 15 kV SiC IGBT and 10 kV SiC MOSFET for ZVS and ZCS high power DC -DC converters

@article{Moballegh2014EvaluationOH,
  title={Evaluation of high voltage 15 kV SiC IGBT and 10 kV SiC MOSFET for ZVS and ZCS high power DC -DC converters},
  author={Shiva Moballegh and Sachin Madhusoodhanan and Subhashish Bhattacharya},
  journal={2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA)},
  year={2014},
  pages={656-663}
}
The advent of Silicon Carbide (SiC) devices has made possible high switching frequency operation of PWM power converters. In this paper, SiC devices are compared in detail with Si devices in a high power (1 MW) DC -DC converter application. The converter is designed as the building block for traction drives which requires it to operate at high power, high input voltage (11 kV) and low output voltage (800 V) levels. A dual active bridge (DAB) and a series resonant converter (SRC) topology are… CONTINUE READING

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