Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors

Abstract

This paper presents preliminary results on the static and dynamic characterization of 12 kV and 20 kV N-channel silicon carbide Insulated-Gate Bipolar Transistors (IGBTs). These state-of-the-art devices were evaluated for their possible use in pulsed-power and energy conversion applications. The 12 kV IGBTs had a chip area of 0.7 cm2 and were rated for 10 A… (More)

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