Evaluation of damages using electron spin resonance (ESR) in oxide semiconductors induced by plasma

@article{Matsuda2013EvaluationOD,
  title={Evaluation of damages using electron spin resonance (ESR) in oxide semiconductors induced by plasma},
  author={Tokiyoshi Matsuda and Daiki Nishimoto and Kota Takahashi and Taiki Ueno and Mutsumi Kimura},
  journal={2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)},
  year={2013},
  pages={239-242}
}
Damage induced in IGZO and ZnO powder by Ar or O2 plasma was evaluated by electron spin resonance (ESR) measurement. The ESR signals were newly found at g-factor at 1.939 with peak to peak width at 0.97 mT, and weak ESR signal at g-factor at 2.0030 for plasma-damaged IGZO powder, respectively. These ESR signals would be due to the oxygen vacancies in IGZO… CONTINUE READING