Evaluation of analog performance of monolayer and bilayer two-dimensional transition metal dichalcogenide (TMD) MOSFETs

We investigate the analog performance of monolayer and bilayer two-dimensional transition metal dichalcogenide (TMD) MOSFETs. The device analog metrics including the transconductance (gm), output resistance (Ro) and intrinsic gain (gm × Ro) for TMD device are investigated using 3D atomistic TCAD simulations. It is shown that bilayer TMD devices exhibit… CONTINUE READING