Evaluation of a dual bias dual metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter.

@article{Soubra1994EvaluationOA,
  title={Evaluation of a dual bias dual metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter.},
  author={M Soubra and Joanna E Cygler and Grant Mackay},
  journal={Medical physics},
  year={1994},
  volume={21 4},
  pages={567-72}
}
A new type of direct reading semiconductor dosimeter has been investigated as a radiation detector for photon and electron therapy beams of various energies. The operation of this device is based on the measurement of the threshold voltage shift in a custom-built metal oxide-silicon semiconductor field effect transistor (MOSFET). This voltage is a linear function of absorbed dose. The extent of the linearity region is dependent on the voltage controlled operation during irradiation. Operating… CONTINUE READING
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