Evaluation of Stress-Induced Effects in Electronic Characteristics of nMOSFETs


Stress-induced shifts in the DC characteristics of nMOSFETs were investigated experimentally by the 4-point bending method. We measured the device shape dependence and load direction dependence of the DC characteristic shifts. We also carried out drift-diffusion device simulation in order to evaluate the experimental results. The simulation model includes… (More)


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